Everspin (Chandler, Ariz.) introduced a family of storage accelerators, nvNITRO, said to harness the power of ST-MRAM to deliver extremely fast read and write times with ultra-low latency. The company said initial nvNITRO accelerators will be available in capacities of a 1GB and 2GB, based on Everspin’s 256Mb DDR3 ST-MRAM. Additional capacities from 4GB up to 16GB are expected to be available later in this year using Everspin’s forthcoming 1 Gb DDR4 ST-MRAM.

 

“It’s definitely a new avenue for us to get the technology into the marketplace in a different way,” said Joe O’Hare, Everspin’s director of product marketing, in an interview with EE Times. “That doesn’t mean that we are backing off at all on supplying memory chips to the market. That’s still our primary business.”

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